Datasheet > S-LBAS70BST5G

S-LBAS70BST5G

更新时间： 2022-06-24 15:43:44

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
4页	253K
描述
SCHOTTKY BARRIER DIODE

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S-LBAS70BST5G 数据手册

LESHAN RADIO COMPANY, LTD.

SCHOTTKY BARRIER

DIODE

LBAS70BST5G

Features

S-LBAS70BST5G

ꢀ

Low forward current

ꢀ High breakdown voltage

ꢀ Guard ring protected

ꢀ Low diode capacitance.

^ꢀS- Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable.

SOD882

APPLICATIONS

^ꢀUltra high-speed switching

^ꢀVoltage clamping

Cathode

Anode

^ꢀProtection circuits.

DESCRIPTION

Planar Schottky barrier diodes with an integrated guard ring for

stress protection.Single diodes and double diodes with different

pinning are available.

We declare that the material of product

compliance with RoHS requirements.

ORDERING INFORMATION

Device

Marking

Shipping

LBAS70BST1G

S-LBAS70BST1G

5000/Tape&Reel

LBAS70BST3G

8000/Tape&Reel

10000/Tape&Reel

S-LBAS70BST3G

LBAS70BST5G

S-LBAS70BST5G

Rev.B 1/4

12 3 4

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