Datasheet > RTQ020N05

RTQ020N05

更新时间： 2024-09-17 06:08:55

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
5页	218K
描述
2.5V Drive Nch MOSFET

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中文翻译

获取价格

数据手册

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RTQ020N05 数据手册

2.5V Drive Nch MOSFET

RTQ020N05

zStructure

zDimensions (Unit : mm)

Silicon N-channel MOSFET

TSMT6

1.0MAX

2.9

1.9

0.95 0.95

0.85

0.7

zFeatures

1) Low On-resistance.

(6)

(5)

(4)

2) Space savingsmall surface mount package (TSMT6).

3) Low voltage drive (2.5V drive).

0~0.1

(1)

(2)

(3)

1pin mark

0.16

0.4

Each lead has same dimensions

Abbreviated symbol : PU

zApplications

Switching

zPackaging specifications

zInner circuit

Package

Taping

(6)

(5)

(4)

Type

Code

Basic ordering unit (pieces)

3000

∗2

RTQ020N05

∗1

(1) Drain

(2) Drain

(3) Gate

(4) Source

(5) Drain

(6) Drain

(1)

(2)

(3)

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Symbol

Limits

Unit

V_DSS

V_GSS

I_D

Gate-source voltage

Continuous

Pulsed

Drain current

∗1

I_DP

Source current

(Body diode)

Continuous

Pulsed

I_S

∗1

∗2

I_SP

Total power dissipation

Channel temperature

P_D

1.25

°C

Tch

Tstg

150

Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

∗2 When mounted on a ceramic board

−55 to +150

zThermal resistance

Parameter

Symbol

Limits

100

Unit

∗

Channel to ambient

∗ When mounted on a ceramic board

Rth(ch-a)

°C/W

www.rohm.com

2009.10 - Rev.A

1/4

12 3 4 5

中文翻译

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