RTQ035N03

更新时间： 2024-09-17 03:35:39

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
3页	61K
描述
2.5V Drive Nch MOS FET

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中文翻译

获取价格

数据手册

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RTQ035N03 数据手册

RTQ035N03

Transistors

2.5V Drive Nch MOS FET

RTQ035N03

zStructure

zExternal dimensions (Unit : mm)

Silicon N-channel MOS FET

TSMT6

1.0MAX

2.9

1.9

0.95 0.95

0.85

0.7

zFeatures

(6)

(5)

(4)

1) Low On-resistance.

2) Space saving, small surface mount package (TSMT6).

3) Low voltage drive (2.5V drive).

0~0.1

(1)

(2)

(3)

1pin mark

0.16

0.4

Each lead has same dimensions

Abbreviated symbol : QP

zApplications

Switching

zPackaging specifications

zInner circuit

(6)

(5)

(4)

Package

Taping

Type

Code

Basic ordering unit (pieces)

3000

∗2

RTQ035N03

∗1

(1) Drain

(2) Drain

(3) Gate

(4) Source

(5) Drain

(6) Drain

(1)

(2)

(3)

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

V_DSS

V_GSS

I_D

Limits

Unit

Continuous

3.5

Drain current

Pulsed

∗1

I_DP

I_S

Source current

(Body diode)

Continuous

1.0

∗1

∗2

Pulsed

I_SP

4.0

Total power dissipation

Channel temperature

P_D

1.25

150

°C

Tch

Tstg

Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

−55 to +150

zThermal resistance

Parameter

Symbol

Limits

100

Unit

∗

Channel to ambient

∗ Mounted on a ceramic board

Rth(ch-a)

°C/W

1/2

12 3

中文翻译

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