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RTQ020N05HZGTR PDF预览

RTQ020N05HZGTR

更新时间: 2024-11-07 21:19:47
品牌 Logo 应用领域
罗姆 - ROHM /
页数 文件大小 规格书
14页 1481K
描述
Small Signal Field-Effect Transistor,

RTQ020N05HZGTR 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliantFactory Lead Time:16 weeks
风险等级:1.47Base Number Matches:1

RTQ020N05HZGTR 数据手册

 浏览型号RTQ020N05HZGTR的Datasheet PDF文件第2页浏览型号RTQ020N05HZGTR的Datasheet PDF文件第3页浏览型号RTQ020N05HZGTR的Datasheet PDF文件第4页浏览型号RTQ020N05HZGTR的Datasheet PDF文件第5页浏览型号RTQ020N05HZGTR的Datasheet PDF文件第6页浏览型号RTQ020N05HZGTR的Datasheet PDF文件第7页 
RTQ020N05HZG  
ꢀꢀNch 45V 2A Small Signal MOSFET  
Datasheet  
ꢀꢀ  
llOutline  
SOT-457T  
VDSS  
45V  
190mΩ  
±2A  
SC-95  
RDS(on)(Max.)  
TSMT6  
ID  
PD  
1.25W  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
llInner circuit  
llFeatures  
1) Low on - resistance  
2) Built-in G-S protection diode  
3) Small surface mount package(TSMT6)  
4) Pb-free lead plating ; RoHS compliant  
5) AEC-Q101 Qualified  
llPackaging specifications  
Embossed  
Tape  
Packing  
Reel size (mm)  
180  
8
llApplication  
Tape width (mm)  
Type  
Switching  
Basic ordering unit (pcs)  
Taping code  
3000  
TR  
Marking  
PU  
llAbsolute maximum ratings (T = 25°C ,unless otherwise specified)  
a
Parameter  
Symbol  
VDSS  
ID  
Value  
45  
Unit  
V
Drain - Source voltage  
Continuous drain current  
Pulsed drain current  
±2  
A
*1  
IDP  
±8  
A
VGSS  
Gate - Source voltage  
±12  
V
*2  
PD  
1.25  
0.95  
150  
W
W
Power dissipation  
*3  
PD  
Tj  
Junction temperature  
Tstg  
Operating junction and storage temperature range  
-55 to +150  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
www.rohm.com  
© 2018 ROHMCo., Ltd. All rights reserved.  
ꢀ ꢀ  
1/11  
20180723 - Rev.001  

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