Datasheet > RTF016N05

RTF016N05

更新时间： 2024-09-20 09:42:11

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
7页	1116K
描述
2.5V Drive Nch MOSFET

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中文翻译

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RTF016N05 数据手册

Data Sheet

2.5V Drive Nch MOSFET

RTF016N05

 Structure

 Dimensions (Unit : mm)

Silicon N-channel MOSFET

TUMT3

Features

1) Low on-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (TUMT3).

Abbreviated symbol : PU

 Application

Switching

 Packaging specifications

 Inner circuit

(3)

Package

Taping

Type

Code

Basic ordering unit (pieces)

3000



∗2

RTF016N05

∗1

(1) Gate

(2) Source

(3) Drain

(1)

(2)

 Absolute maximum ratings (Ta = 25C)

Parameter

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

Symbol

V_DSS

V_GSS

I_D

Limits

Unit

Drain-source voltage

Gate-source voltage

12

Continuous

1.6

Drain current

Pulsed

I_DP

I_S

6.4

0.6

Continuous

Pulsed

Source current

(Body Diode)

I_SP

6.4

Power dissipation

P_D

0.8

C

Channel temperature

Tch

Tstg

150

Range of storage temperature

*1 Pw10s, Duty cycle1%

55 to 150

*2 Mounted on a ceramic board.

 Thermal resistance

Parameter

Symbol

Rth (ch-a)^*

Limits

156

Unit

Channel to Ambient

*Mounted on a ceramic board.

C / W

www.rohm.com

2011.05 - Rev.A

1/6

12 3 4 5 6 7

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