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RTF020P02TR PDF预览

RTF020P02TR

更新时间: 2024-09-20 21:19:39
品牌 Logo 应用领域
罗姆 - ROHM 开关光电二极管晶体管
页数 文件大小 规格书
5页 110K
描述
Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TUMT3, 3 PIN

RTF020P02TR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.71
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):2 A最大漏极电流 (ID):2 A
最大漏源导通电阻:0.165 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F3JESD-609代码:e2
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.8 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Copper (Sn/Cu)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

RTF020P02TR 数据手册

 浏览型号RTF020P02TR的Datasheet PDF文件第2页浏览型号RTF020P02TR的Datasheet PDF文件第3页浏览型号RTF020P02TR的Datasheet PDF文件第4页浏览型号RTF020P02TR的Datasheet PDF文件第5页 
RTF020P02  
Transistors  
2.5V Drive Pch MOS FET  
RTF020P02  
zExternal dimensions (Unit : mm)  
zStructure  
Silicon P-channel  
MOS FET  
TUMT3  
0.85Max.  
0.77  
2.0  
0.3  
(3)  
zFeatures  
0~0.1  
1) Low on-resistance. (120mat 2.5V)  
2) High power package.  
3) High speed switching.  
4) Low voltage drive. (2.5V)  
(1) (2)  
0.17  
0.65 0.65  
1.3  
(1) Gate  
(2) Source  
(3) Drain  
Abbreviated symbol : WM  
zApplications  
DC-DC converter  
zPackaging specifications  
zEquivalent circuit  
Package  
Taping  
(3)  
Type  
Code  
TL  
Basic ordering unit (pieces)  
3000  
RTF020P02  
(1)  
2  
1  
(2)  
(1) Gate  
(2) Source  
(3) Drain  
1 ESD PROTECTION DIODE  
2 BODY DIODE  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Symbol  
VDSS  
VGSS  
ID  
Limits  
20  
12  
Unit  
V
V
Continuous  
2.0  
8
A
Drain current  
Pulsed  
1  
IDP  
A
1  
Source current  
(Body diode)  
Continuous  
Pulsed  
IS  
0.6  
8  
0.8  
A
ISP  
A
2  
Total power dissipation  
Channel temperature  
PD  
W
°C  
Tch  
150  
Range of Storage temperature  
1 Pw10µs, Duty cycle1%  
2 Mounted on a ceramic board  
Tstg  
55 to +150  
°C  
zThermal resistance  
Parameter  
Symbol  
Rth(ch-a) ∗  
Limits  
156  
Unit  
Channel to ambient  
Mounted on a ceramic board.  
°C / W  
Rev.B  
1/4  

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