RTF025N03

更新时间： 2024-09-20 03:35:39

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
3页	82K
描述
2.5V Drive Nch MOS FET

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中文翻译

获取价格

数据手册

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RTF025N03 数据手册

RTF025N03

Transistors

2.5V Drive Nch MOS FET

RTF025N03

zStructure

zExternal dimensions (Unit : mm)

Silicon N-channel MOS FET

TUMT3

0.85Max.

0.77

2.0

0.3

zFeatures

1) Low On-resistance.

(3)

0~0.1

2) Space saving−small surface mount package (TUMT3).

3) Low voltage drive (2.5V drive).

(1) (2)

0.17

0.65 0.65

1.3

(1) Gate

(2) Source

(3) Drain

Abbreviated symbol : PL

zApplications

Switching

zPackaging specifications

zInner circuit

(3)

Package

Taping

Type

Code

Basic ordering unit (pieces)

3000

RTF025N03

(1)

∗2

∗1

(2)

(1) Gate

(2) Source

(3) Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

V_DSS

V_GSS

I_D

Limits

Unit

Continuous

2.5

Drain current

Pulsed

∗1

I_DP

I_S

0.6

Source current

(Body diode)

Continuous

∗1

∗2

Pulsed

I_SP

Total power dissipation

Channel temperature

P_D

0.8

°C

Tch

Tstg

150

Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

−55 to +150

zThermal resistance

Parameter

Symbol

Limits

156

Unit

∗

Channel to ambient

∗ Mounted on a ceramic board

Rth(ch-a)

°C/W

1/2

12 3

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