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RTF015N03TL PDF预览

RTF015N03TL

更新时间: 2024-11-08 12:28:23
品牌 Logo 应用领域
罗姆 - ROHM 二极管
页数 文件大小 规格书
12页 677K
描述
Built-in G-S Protection Diode.

RTF015N03TL 数据手册

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RTF015N03  
Nch 30V 1.5A Power MOSFET  
Datasheet  
lOutline  
VDSS  
30V  
240mW  
1.5A  
(3)  
TUMT3  
RDS(on) (Max.)  
(1)  
ID  
(2)  
PD  
0.8W  
lFeatures  
1) Low on - resistance.  
lInner circuit  
(1) Gate  
(2) Source  
(3) Drain  
2) Built-in G-S Protection Diode.  
3) Small Surface Mount Package (TUMT3).  
4) Pb-free lead plating ; RoHS compliant  
*1 ESD PROTECTION DIODE  
*2 BODY DIODE  
lPackaging specifications  
Packaging  
Taping  
180  
8
Reel size (mm)  
lApplication  
Tape width (mm)  
Type  
DC/DC converters  
Basic ordering unit (pcs)  
3,000  
TL  
Taping code  
Marking  
PP  
lAbsolute maximum ratings(Ta = 25°C)  
Parameter  
Symbol  
VDSS  
Value  
30  
Unit  
V
Drain - Source voltage  
Continuous drain current  
Pulsed drain current  
*1  
A
ID  
1.5  
*2  
A
ID,pulse  
6.0  
VGSS  
Gate - Source voltage  
12  
V
*3  
0.8  
W
W
°C  
°C  
PD  
Power dissipation  
*4  
0.32  
PD  
Tj  
Junction temperature  
150  
Tstg  
Range of storage temperature  
-55 to +150  
www.rohm.com  
© 2013 ROHM Co., Ltd. All rights reserved.  
2013.02 - Rev.B  
1/11  

RTF015N03TL 替代型号

型号 品牌 替代类型 描述 数据表
RTF025N03TL ROHM

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Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal

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