Datasheet > RM4N650IP

RM4N650IP

更新时间： 2024-11-19 01:22:31

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
9页	641K
描述
N-Channel Super Junction Power MOSFET

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中文翻译

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数据手册

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RM4N650IP 数据手册

RM4N650IP

RM4N650LD

N-Channel Super Junction Power MOSFET Ċ

General Description

The series of devices use advanced super junction

technology and design to provide excellent R^DS(ON)with low

gate charge. This super junction MOSFET fits the industry’s

AC-DC SMPS requirements for PFC, AC/DC power

conversion, and industrial power applications.

V_DS

650

1200

mΩ

R_{DS(ON) MAX}

I_D

Features

ƽNew technology for high voltage device

ƽLow on-resistance and low conduction losses

ƽSmall package

ƽUltra Low Gate Charge cause lower driving requirements

ƽ100% Avalanche Tested

ƽROHS compliant

Application

ƽꢀ Power factor correction˄PFC˅

ƽꢀ Switched mode power supplies(SMPS)

ƽꢀ Uninterruptible Power Supply˄UPS˅

Schematic diagram

Package Marking And Ordering Information

Device

Device Package

Marking

RM4N650IP

RM4N650LD

TO-251

4N650

TO-252

TO-251

TO-252

Table 1. Absolute Maximum Ratings (T_C=25ć)

Parameter

Symbol

Value

Unit

650

f30

Drain-Source Voltage (

VGS=0V˅

VDS

Gate-Source Voltage (VDS=0V)

VGS

Continuous Drain Current at Tc=25°C

I_{D (DC)}

I_{DM (pluse)}

P_D

Continuous Drain Current at Tc=100°C

2.5

(Note 1)

Pulsed drain current

Maximum Power Dissipation(Tc=25ć)

Derate above 25°C

0.37

130

W/°C

Single pulse avalanche energy ^(Note2)

Avalanche current^{(Note 1)}

I_AR

Repetitive Avalanche energy ˈt_ARlimited by T_jmax

0.2

E_AR

(Note 1)

12 3 4 5 6 7...9

中文翻译

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与RM4N650IP相关器件

型号	品牌	获取价格	描述	数据表
RM4N650LD	RECTRON	获取价格	N-Channel Super Junction Power MOSFET
RM4N650T2	RECTRON	获取价格	N-Channel Super Junction Power MOSFET
RM4N650TI	RECTRON	获取价格	N-Channel Super Junction Power MOSFET
RM4N700DF	RECTRON	获取价格	Vdss (V) : 700 V;Id @ 25C (A) : 3.5 A;Rds-on (typ) (mOhms) : 1122 mOhms;Total Gate Charge
RM4N700IP	RECTRON	获取价格	N-Channel Super Junction Power MOSFET
RM4N700LD	RECTRON	获取价格	N-Channel Super Junction Power MOSFET
RM4N700S4	RECTRON	获取价格	Vdss (V) : 700 V;Id @ 25C (A) : 4.0 A;Rds-on (typ) (mOhms) : 1100 mOhms;Total Gate Charge
RM4P20ES6	RECTRON	获取价格	Vdss (V) : 20 V;Id @ 25C (A) : 4.1 A;Rds-on (typ) (mOhms) : 39 mOhms;Total Gate Charge (nQ
RM4P20S6	RECTRON	获取价格	Vdss (V) : 20 V;Id @ 25C (A) : 4.1 A;Rds-on (typ) (mOhms) : 39 mOhms;Total Gate Charge (nQ
RM4P30S6	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 4.2 A;Rds-on (typ) (mOhms) : 47 mOhms;Total Gate Charge (nQ