型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RM4N650TI | RECTRON |
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N-Channel Super Junction Power MOSFET | |
RM4N700DF | RECTRON |
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Vdss (V) : 700 V;Id @ 25C (A) : 3.5 A;Rds-on (typ) (mOhms) : 1122 mOhms;Total Gate Charge | |
RM4N700IP | RECTRON |
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N-Channel Super Junction Power MOSFET | |
RM4N700LD | RECTRON |
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N-Channel Super Junction Power MOSFET | |
RM4N700S4 | RECTRON |
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Vdss (V) : 700 V;Id @ 25C (A) : 4.0 A;Rds-on (typ) (mOhms) : 1100 mOhms;Total Gate Charge | |
RM4P20ES6 | RECTRON |
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Vdss (V) : 20 V;Id @ 25C (A) : 4.1 A;Rds-on (typ) (mOhms) : 39 mOhms;Total Gate Charge (nQ | |
RM4P20S6 | RECTRON |
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Vdss (V) : 20 V;Id @ 25C (A) : 4.1 A;Rds-on (typ) (mOhms) : 39 mOhms;Total Gate Charge (nQ | |
RM4P30S6 | RECTRON |
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Vdss (V) : 30 V;Id @ 25C (A) : 4.2 A;Rds-on (typ) (mOhms) : 47 mOhms;Total Gate Charge (nQ | |
RM4T102D | CRYDOM |
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General Purpose Inductor, 100uH, 1 Element | |
RM4T102S | CRYDOM |
获取价格 |
General Purpose Inductor, 100uH, 1 Element |