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RM4N650T2 PDF预览

RM4N650T2

更新时间: 2024-10-31 01:13:51
品牌 Logo 应用领域
RECTRON /
页数 文件大小 规格书
11页 967K
描述
N-Channel Super Junction Power MOSFET

RM4N650T2 数据手册

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RM4N650T2  
RM4N650HD  
RM4N650TI  
N-Channel Super Junction Power MOSFET Ċ  
General Description  
The series of devices use advanced super junction  
technology and design to provide excellent RDS(ON) with low  
RDS(ON) MAX  
gate charge. This super junction MOSFET fits the industry’s  
VDS@Tjmax  
650  
1200  
4
V
mΩ  
A
ID  
AC-DC SMPS requirements for PFC, AC/DC power  
conversion, and industrial power applications.  
Features  
ƽNew technology for high voltage device  
ƽLow on-resistance and low conduction losses  
ƽSmall package  
ƽUltra Low Gate Charge cause lower driving requirements  
ƽ100% Avalanche Tested  
ƽROHS compliant  
Application  
ƽꢀ Power factor correction˄PFC˅  
Schematic diagram  
ƽꢀ Switched mode power supplies(SMPS)  
ƽꢀ Uninterruptible Power Supply˄UPS˅  
Package Marking And Ordering Information  
Device  
Device Package  
Marking  
RM4N650T2  
RM4N650HD  
RM4N650TI  
TO-220  
4N650  
TO-263  
4N650  
4N650  
TO-220F  
TO-263  
TO-220  
TO-220F  
Unit  
Table 1. Absolute Maximum Ratings (TC=25ć)  
RM4N650T2  
RM4N650HD  
Parameter  
Symbol  
RM4N650TI  
650  
V
V
Drain-Source Voltage (VGS=0V˅  
Gate-Source Voltage (VDS=0V)  
VDS  
VGS  
f30  
Continuous Drain Current at Tc=25°C  
4
2.5  
12  
4*  
2.5  
A
ID (DC)  
ID (DC)  
IDM (pluse)  
PD  
Continuous Drain Current at Tc=100°C  
A
(Note 1)  
12  
A
Pulsed drain current  
Maximum Power Dissipation(Tc=25°C)  
46  
28.5  
0.23  
W
W/°C  
mJ  
A
Derate above 25  
0.37  
ć
Single pulse avalanche energy (Note2)  
130  
2
EAS  
Avalanche current(Note 1)  
IAR  
Repetitive Avalanche energy ˈtAR limited by Tjmax  
0.2  
EAR  
mJ  
(Note 1)  
2017-05  
REV:A15  

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