Datasheet > RM4N650TI

RM4N650TI

更新时间： 2024-11-19 01:13:51

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
11页	967K
描述
N-Channel Super Junction Power MOSFET

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中文翻译

获取价格

数据手册

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RM4N650TI 数据手册

RM4N650T2

RM4N650HD

RM4N650TI

N-Channel Super Junction Power MOSFET Ċ

General Description

The series of devices use advanced super junction

technology and design to provide excellent R^DS(ON)with low

R_{DS(ON) MAX}

gate charge. This super junction MOSFET fits the industry’s

V_DS@T_jmax

650

1200

mΩ

I_D

AC-DC SMPS requirements for PFC, AC/DC power

conversion, and industrial power applications.

Features

ƽNew technology for high voltage device

ƽLow on-resistance and low conduction losses

ƽSmall package

ƽUltra Low Gate Charge cause lower driving requirements

ƽ100% Avalanche Tested

ƽROHS compliant

Application

ƽꢀ Power factor correction˄PFC˅

Schematic diagram

ƽꢀ Switched mode power supplies(SMPS)

ƽꢀ Uninterruptible Power Supply˄UPS˅

Package Marking And Ordering Information

Device

Device Package

Marking

RM4N650T2

RM4N650HD

RM4N650TI

TO-220

4N650

TO-263

4N650

TO-220F

TO-263

TO-220

TO-220F

Unit

Table 1. Absolute Maximum Ratings (T_C=25ć)

RM4N650T2

RM4N650HD

Parameter

Symbol

RM4N650TI

650

Drain-Source Voltage (VGS=0V˅

Gate-Source Voltage (V^DS=0V)

VDS

V^GS

f30

Continuous Drain Current at Tc=25°C

2.5

I_{D (DC)}

I_{DM (pluse)}

P_D

Continuous Drain Current at Tc=100°C

(Note 1)

Pulsed drain current

Maximum Power Dissipation(Tc=25°C)

28.5

0.23

W/°C

Derate above 25

0.37

Single pulse avalanche energy ^(Note2)

130

EAS

Avalanche current^{(Note 1)}

I_AR

Repetitive Avalanche energy ˈt_ARlimited by T_jmax

0.2

E_AR

(Note 1)

2017-05

REV:A15

12 3 4 5 6 7...11

中文翻译

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