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RM4P30S6 PDF预览

RM4P30S6

更新时间: 2024-11-22 18:09:55
品牌 Logo 应用领域
RECTRON
页数 文件大小 规格书
6页 238K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 4.2 A;Rds-on (typ) (mOhms) : 47 mOhms;Total Gate Charge (nQ) typ :

RM4P30S6 数据手册

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RM4P30S6  
-
P Ch 30V Fast Switching MOSFETs  
Description  
Pin Configuration  
The RM4P30S6 is the high cell density trenched  
P-ch MOSFETs, which provides excellent RDSON  
and efficiency for most of the small power  
switching and load switch applications.  
The RM4P30S6 meet the RoHS and Green Product  
requirement, with full function reliability approved.  
Green Device Available  
Super Low Gate Charge  
Excellent CdV/dt effect decline  
Advanced high cell density Trench  
S
D
technology  
Halogen-free  
D
P/N suffix V means AEC-Q101 qualified, e.g:RM4P30S6V  
Product Summary  
G
BVDSS  
RDS ON  
ID  
D
D
-30V  
52mΩ  
-3.9A  
SOT-23-6 top view  
Package Marking And Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
4P30  
RM4P30S6  
SOT-23-6  
Ø180mm  
8 mm  
3000 units  
Absolute Maximum Ratings  
10s  
Steady State  
Drain-Source Voltage  
Gate-SouUce Voltage  
VDS  
VGS  
-30  
V
V
f20  
Continuous Drain Current, VGS @ -10V1  
Continuous Drain Current, VGS @ -10V1  
Pulsed Drain Current2  
ID@TA=25ć  
ID@TA=70ć  
IDM  
-4.5  
-3.5  
-3.9  
-3.1  
A
A
-20  
A
Total Power Dissipation3  
Total Power Dissipation3  
PD@TA=25ć  
1.5  
1.1  
W
W
=
PD@TA 70ć  
0.94  
0.73  
Storage Temperature Range  
Operating Junction Temperature Range  
TSTG  
TJ  
-55 to 150  
ć
ć
-55 to 150  
Thermal Data  
Thermal Resistance Junction Ambient 1  
Thermal Resistance Junction-Ambient 1 (t 10s)  
Thermal Resistance Junction-Case1  
ć/W  
ć/W  
ć/W  
110  
85  
RθJA  
RθJA  
RθJC  
---  
---  
70  
2022-03/83  
REV:A  

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