Datasheet > RM4P20ES6

RM4P20ES6

更新时间： 2024-11-22 18:09:27

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	623K
描述
Vdss (V) : 20 V;Id @ 25C (A) : 4.1 A;Rds-on (typ) (mOhms) : 39 mOhms;Total Gate Charge (nQ) typ : 7.8 nQ;Maximum Power Dissipation (W) : 1.7 W;Vgs(th) (typ) : 0.7 V;Input Capacitance (Ciss) : 740 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23-6L

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RM4P20ES6 数据手册

RM4P20ES6

P-ChannelEnhancement Mode Power MOSFET

Description

The RM4P20ES6 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 2.5V. This device is suitable for use as a

load switch or in PWM applications.

General Features

V_DS= -20V,I_D= -4.1A

Schematic diagram

R_DS(ON)

<80mΩ @ V_GS=-2.5V

R_DS(ON)

_GS=-4.5V

ESD: HBM>2000V

High power and current handing capability

Lead free product is acquired

Surface mount package

Application

PWM applications

Load switch

SOT23-6 top view

Power management

Halogen-free

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

4P20

RM4P20ES6

SOT23-6

Ø180mm

8 mm

3000 units

Absolute Maximum Ratings (T_A=25 unless otherwise noted)

Parameter

Symbol

V^DS

Limit

-20

Unit

Drain-Source Voltage

Gate-Source Voltage

V^GS

T_C=25

T_C=70

T_A=25

T_A=70

-4.1

-3.2

-3

Continuous Drain Current

I_D

-2.3

-15

1.7

Drain Current -Pulsed (Note 1)

Maximum Power Dissipation

I_DM

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient (Note 2)

2020-04/15

REV:O

12 3 4 5 6 7

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