Datasheet > RM4N700LD

RM4N700LD

更新时间： 2024-11-22 01:22:31

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
8页	500K
描述
N-Channel Super Junction Power MOSFET

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中文翻译

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数据手册

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RM4N700LD 数据手册

RM4N700IP

RM4N700LD

N-Channel Super Junction Power MOSFET

General Description

The series of devices use advanced super junction

technology and design to provide excellent R^DS(ON)with low

gate charge. This super junction MOSFET fits the industry’s

AC-DC SMPS requirements for PFC, AC/DC power

conversion, and industrial power applications.

V_DS

700

1200

mΩ

R_DS(ON)TYP.

I_D

Features

ƽNew technology for high voltage device

ƽLow on-resistance and low conduction losses

ƽSmall package

ƽUltra Low Gate Charge cause lower driving requirements

ƽ100% Avalanche Tested

ƽROHS compliant

Application

ƽꢀ Power factor correction˄PFC˅

ƽꢀ Switched mode power supplies(SMPS)

ƽꢀ Uninterruptible Power Supply˄UPS˅

Schematic diagram

Package Marking And Ordering Information

Device

Device Package

Marking

4N700

RM4N700IP

RM4N700LD

TO-251

TO-252

TO-251

TO-252

Table 1. Absolute Maximum Ratings (T_C=25ćć)

Parameter

Symbol

Value

Unit

700

f30

Drain-Source Voltage (

VGS=0V˅

VDS

Gate-Source Voltage (

VDS=0V)

VGS

Continuous Drain Current at Tc=25°C

I_{D (DC)}

I_{DM (pluse)}

P_D

Continuous Drain Current at Tc=100°C

2.5

(Note 1)

Pulsed drain current

Maximum Power Dissipation(Tc=25ć)

Derate above 25°C

0.37

130

W/°C

Single pulse avalanche energy ^(Note2)

Avalanche current^{(Note 1)}

I_AR

Repetitive Avalanche energy ˈt_ARlimited by T_jmax

0.2

E_AR

(Note 1)

2016-11

REV:O15

12 3 4 5 6 7 8

中文翻译

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