Datasheet > RM4503S (P)

RM4503S (P)

更新时间： 2024-10-31 18:06:27

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
10页	673K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 9.1 A;Rds-on (typ) (mOhms) : 15 mOhms;Total Gate Charge (nQ) typ : 30 nQ;Maximum Power Dissipation (W) : 2.5 W;Vgs(th) (typ) : 1.5 V;Input Capacitance (Ciss) : 1600 pF;Polarity : Dual;Mounting Style : SMD/SMT;Package / Case : SOP-8

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RM4503S (P) 数据手册

RM4503S

N and P-Channel Enhancement Mode Power MOSFET

Description

The RM4503S uses advanced trench technology to provide

excellent R_DS(ON)and low gate charge . The SOP-8 package

is universally preferred for all commercial industrial

surface mount applications and suited for low voltage

applications such as DC/DC converters.

N-channel

P-channel

General Features

ƽ N-Channel

Schematic diagram

V_DS= 30V,I_D=10A

_DS(ON)< 18mȍ @ V_GS=4.5V

_DS(ON)< 12mȍ @ V_GS=10V

ƽ P-Channel

V_DS= -30V,I_D= -9.1A

_DS(ON)< 35mȍ @ V_GS=-4.5V

_DS(ON)< 20mȍ @ V_GS=-10V

ƽ High power and current handing capability

ƽ Lead free product is acquired

ƽ Surface mount package

Marking and pin assignment

Application

ƽ Battery protection

ƽ Load switch

ƽ Power management

Halogen-free

SOP-8 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

RM4503S

Ø330mm

12mm

SOP-8

4503

Absolute Maximum Ratings (T_A=25ććunless otherwise noted)

Parameter

Symbol

V_DS

N-Channel P-Channel

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

-30

±20

V_GS

T_A=25ć

T_A=70ć

-9.1

Continuous Drain Current

I_D

7.9

-7.2

Pulsed Drain Current ^{(Note 1)}

Maximum Power Dissipation

I_DM

P_D

-30

T_A=25ć

2.5

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 To 150

2022-01/15

REV:C

12 3 4 5 6 7...10

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