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RM45N600T2 PDF预览

RM45N600T2

更新时间： 2024-11-18 20:01:11
品牌 Logo 应用领域
RECTRON /
页数 文件大小 规格书
10页 395K
描述
Power Field-Effect Transistor,

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中文翻译

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RM45N600T2 技术参数

生命周期：ActiveReach Compliance Code：compliant
风险等级：5.72Base Number Matches：1

RM45N600T2 数据手册

 浏览型号RM45N600T2的Datasheet PDF文件第2页浏览型号RM45N600T2的Datasheet PDF文件第3页浏览型号RM45N600T2的Datasheet PDF文件第4页浏览型号RM45N600T2的Datasheet PDF文件第5页浏览型号RM45N600T2的Datasheet PDF文件第6页浏览型号RM45N600T2的Datasheet PDF文件第7页 
RM45N600T7(T2)  
POWER FIELD EFFECT TRANSISTOR  
GENERAL DESCRIPTION  
SYMBOL  
This high voltage MOSFET uses an advanced termination  
scheme to provide enhanced voltage-blocking capability  
without degrading performance over time. In addition, this  
advanced MOSFET is designed to withstand high energy in  
avalanche and commutation modes. The new energy  
efficient design also offers a drain-to-source diode with a fast  
recovery time. Designed for high voltage, high speed  
switching applications in power supplies, converters and  
PWM motor controls, these devices are particularly well  
suited for bridge circuits where diode speed and  
commutating safe operating areas are critical and offer  
additional and safety margin against unexpected voltage  
transients.  
PIN CONFIGURATION  
Top View  
Top View  
FEATURES  
ꢀ Robust High Voltage Termination  
ꢀ Avalanche Energy Specified  
ꢀ Source-to-Drain Diode Recovery Time Comparable toa  
Discrete Fast Recovery Diode  
ꢀ Diode is Characterized for Use in BridgeCircuits  
IDSS and VDS(on) Specified at ElevatedTemperature  
ꢀ
ꢀ Isolated Mounting Hole Reduces Mounting Hardware  
2
3
1
2
3
1 TO-220  
TO-247  
RM45N600T7  
RM45N600T2  
ABSOLUTE MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
ID 25C(1)  
ID 100C(1)  
IDM  
44.5  
28.2  
135  
30  
Drain to Current 炼 Continuous  
炼 Pulsed  
A
VGS  
Gate-to-Source Voltage 炼 Continue  
V
Total Power Dissipation TO-220  
TO-247  
50  
W
431  
PD  
0.40  
3.45  
Derate above 25ɗ  
TO-220  
TO-247  
W/ɗ  
TJ, TSTG  
EAS  
ɗ
Junction and Storage Temperature Range  
Single Pulse Drain-to-Source Avalanche Energy 炼 TJ = 25ɗ  
(VDD = 100V, VGS = 10V, IL = 12A, L = 10mH, RG = 25Ω)  
-55 to 150  
809  
mJ  
TO-220  
TO-247  
RθJC  
2.5  
0.29  
Thermal Resistance 炼 Junction to Case  
炼 Junction to Case  
ɗ/W  
炼 Junction to Ambient TO-220  
炼 Junction to Ambient TO-247  
RθJA  
TL  
62.5  
40  
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds  
260  
ɗ
2018-12/71  
REV:O  
1234567...10

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