Datasheet > RM45N60DF

RM45N60DF

更新时间： 2024-10-15 18:09:47

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
9页	616K
描述
Vdss (V) : 60 V;Id @ 25C (A) : 45 A;Rds-on (typ) (mOhms) : 10 mOhms;Total Gate Charge (nQ) typ : 58 nQ;Maximum Power Dissipation (W) : 60 W;Vgs(th) (typ) : 1.8 V;Input Capacitance (Ciss) : 2180 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : DFN5X6-8L

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RM45N60DF 数据手册

RM45N60DF

Enhancement Mode Power MOSFET

N-Channel

Description

The RM45N60DF uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

ƽ V_DS= 60V,I_D=45A

_DS(ON)< 13mΩ @ V_GS=10V (Typ:10mΩ)

_DS(ON)< 17mΩ @ V_GS=4.5V (Typ:13mΩ)

Schematic diagram

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Low gate to drain charge to reduce switching losses

Application

ƽ Power switching application

ƽ Load switch

P/N suffix V means AEC-Q101 qualified, e.g:RM45N60DFV

Halogen-free

DFN5X6-8L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

ꢀ

5000

45N60

RM45N60DF

DFN5X6-8L

Ø330mm

12mm

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

±20

VGS

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć)

I_DM

140

Maximum Power Dissipation

P_D

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_θJC

2.5

ć/W

Electrical Characteristics (T_C=25ćunless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BV_DSS

V_GS=0V I_D=250μA

2018-06/15

REV:A

12 3 4 5 6 7...9

中文翻译

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