是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | DIP, DIP8,.3 | Reach Compliance Code: | unknown |
风险等级: | 5.88 | 放大器类型: | OPERATIONAL AMPLIFIER |
架构: | VOLTAGE-FEEDBACK | 最大平均偏置电流 (IIB): | 0.25 µA |
25C 时的最大偏置电流 (IIB): | 0.25 µA | 最小共模抑制比: | 80 dB |
标称共模抑制比: | 100 dB | 频率补偿: | YES |
最大输入失调电压: | 5000 µV | JESD-30 代码: | R-GDIP-T8 |
JESD-609代码: | e0 | 低-失调: | NO |
负供电电压上限: | -22 V | 标称负供电电压 (Vsup): | -15 V |
功能数量: | 2 | 端子数量: | 8 |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
封装主体材料: | CERAMIC, GLASS-SEALED | 封装代码: | DIP |
封装等效代码: | DIP8,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | +-15 V | 认证状态: | Not Qualified |
筛选级别: | 38535Q/M;38534H;883B | 最小摆率: | 1.5 V/us |
标称压摆率: | 2 V/us | 子类别: | Operational Amplifier |
最大压摆率: | 5.6 mA | 供电电压上限: | 22 V |
标称供电电压 (Vsup): | 15 V | 表面贴装: | NO |
技术: | BIPOLAR | 温度等级: | MILITARY |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 标称均一增益带宽: | 4000 kHz |
最小电压增益: | 50000 | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RM4559D883B | FAIRCHILD |
获取价格 |
Dual High-Gain Operational Amplifier | |
RM4559FKB | TI |
获取价格 |
IC,OP-AMP,DUAL,BIPOLAR,LLCC,20PIN,CERAMIC | |
RM4559JGB | TI |
获取价格 |
IC,OP-AMP,DUAL,BIPOLAR,DIP,8PIN,CERAMIC | |
RM4559LB | TI |
获取价格 |
IC,OP-AMP,DUAL,BIPOLAR,CAN,8PIN,METAL | |
RM4559T | RAYTHEON |
获取价格 |
Operational Amplifier, 2 Func, 5000uV Offset-Max, BIPolar, MBCY8, | |
RM4559T | FAIRCHILD |
获取价格 |
Dual High-Gain Operational Amplifier | |
RM4559T/883B | RAYTHEON |
获取价格 |
Operational Amplifier, 2 Func, 5000uV Offset-Max, BIPolar, MBCY8, | |
RM4559T883B | FAIRCHILD |
获取价格 |
Dual High-Gain Operational Amplifier | |
RM45N600T2 | RECTRON |
获取价格 |
Power Field-Effect Transistor, | |
RM45N600T7 | RECTRON |
获取价格 |
Power Field-Effect Transistor, |