Datasheet > RLT650_200G

RLT650_200G

更新时间： 2024-11-02 12:32:31

品牌	Logo	应用领域
ROITHNER		二极管激光二极管
页数	文件大小	规格书
3页	186K
描述
High Power Visible Laser Diode

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RLT650_200G 数据手册

RLT650-200G

TECHNICAL DATA

High Power Visible Laser Diode

Features

•

Lasing Mode Structure: multi mode

Peak Wavelength : typ. 650 nm

Optical Ouput Power: 200 mW

Package: 9 mm

Electrical Connection

Pin Configuration

Bottom View

n-type

Function

LD Cathode

LD Anode, PD Cathode

PD Anode

Absolute Maximum Ratings (T_C=20°C)

Item

Symbol

Value

200

-20 … +25

-40 … +85

Unit

°C

CW Output Power

P_O

T_C

T_stg

Operating Case Temperature

Storage Temperature

°C

Specifications (T_C=20°C)

Item

Optical Specifications

CW Output Power

Center Wavelength

Spectral Width (FWHM)

Wavelength Temperature Coefficient

Symbol

Min.

Typ.

Max.

Unit

P_O

λ_C

Δλ

∂λ / ∂T

θ_║

θ_┴

200

650

0.25

100 x 1

660

2.5

nm/°C

deg

µm

645

FWHM Beam Divergence

Emitting Aperature

Polarization

W x H

Lifetime

5000

hour

Electrical Specifications

Threshold Current

Operating Current

Slope Efficiency

Operating Voltage

Series Resistance

Monitor Current

I_th

I_op

U_op

R_d

I_m

550

820

0.90

2.1

0.8

600

900

2.3

W/A

Ω

0.85

0.2

0.5

The above specifications are for reference purpose only and subjected to change without prior notice.

03.08.2010

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