Datasheet > RLT790-80MGS

RLT790-80MGS

更新时间： 2024-10-01 12:46:55

品牌	Logo	应用领域
ROITHNER		二极管激光二极管
页数	文件大小	规格书
3页	283K
描述
High Power Infrared Laser Diode

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RLT790-80MGS 数据手册

RLT790-80MGS

TECHNICAL DATA

High Power Infrared Laser Diode

Features

•

Lasing Mode Structure: single mode

Peak Wavelength : typ. 790 nm

Optical Output Power: 80 mW

Package: 5.6 mm

Electrical Connection

Pin Configuration

Bottom View

n-type

Function

LD Anode

LD Cathode, PD Anode

PD Cathode

Absolute Maximum Ratings (T_C=25°C)

Item

Symbol

Value

-10 … +60

-40 … +85

Unit

°C

CW Output Power

P_O

T_C

T_stg

Operating Case Temperature

Storage Temperature

°C

Specifications (T_C=25°C)

Item

Optical Specification

CW Output Power

Peak Wavelength

Spectral Width (FWHM)

Symbol

Min.

Typ.

Max.

Unit

P_O

λ_P

Δλ

θ_║

θ_┴

785

0.5

790

deg

µm

hour

780

FWHM Beam Divergence

Emitting Aperature

Chip Cavity Length

Lifetime

W x H

5 x 1

0.75

100000

Electrical Specification

Threshold Current

Operating Current

Slope Efficiency

Operating Voltage

Monitor Current

I_th

I_op

U_op

I_m

105

1.1

2.0

1.2

130

2.8

1.6

W/A

1.0

The above specifications are for reference purpose only and subjected to change without prior notice.

15.07.2013

RLT790-80MGS

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