Datasheet > RLT8810MG

RLT8810MG

更新时间： 2022-04-21 14:05:06

品牌	Logo	应用领域
ROITHNER		/
页数	文件大小	规格书
1页	36K
描述
High Power Infrared Laserdiode

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RLT8810MG 数据手册

ROITHNER LASERTECHNIK

A-1040 WIEN, FLEISCHMANNGASSE 9

TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43

e-mail: office@roithner-laser.com

http://www.roithner-laser.com

RLT8810MG TECHNICAL DATA

High Power Infrared Laserdiode

Structure: index guided single transverse mode

Lasing wavelength: 875 nm typ.

Output power: 10 mW cw

NOTE!

LASERDIODE

Package: 5.6 mm, TO-18

MUST BE COOLED!

PIN CONNECTION:

1) Laser diode cathode

2) Laser diode anode and photodiode cathode

3) Photodiode anode

Maximum Ratings (Tc = 25°C)

CHARACTERISTIC

Optical Output Power

LD Reverse Voltage

PD Reverse Voltage

Operation Case Temperature

Storage Temperature

SYMBOL

P_o

RATING

-10 .. +60

-40 .. +85

UNIT

°C

V_R(LD)

V_R(PD)

T_C

T_STG

°C

Optical-Electrical Characteristics (Tc = 25°C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX UNIT

Threshold Current

Operation Current

Operating Voltage

Lasing Wavelength

Beam Divergence

Slope Efficiency

Monitor Current

I_th

I_op

V_op

1.65

875

0.7

400

1.8

883

500

P_o= 10 mW

0.5

q_//

q_^

mW/mA

I_m

P_o= 10 mW

µA

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