Datasheet > RLT940-300GS

RLT940-300GS

更新时间： 2022-05-06 20:21:06

品牌	Logo	应用领域
ROITHNER		二极管激光二极管
页数	文件大小	规格书
1页	58K
描述
High Power Infrared Laser Diode

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数据手册

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RLT940-300GS 数据手册

ROITHNER LASERTECHNIK

SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA

TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44

office@roithner-laser.com www.roithner-laser.com

RLT940-300GS TECHNICAL DATA

High Power Infrared Laser Diode

NOTE!

Lasing mode structure: single mode

Lasing wavelength: typ. 940 nm

Optical power: 300 mW

LASERDIODE

MUST BE COOLED!

Package: 9 mm (SOT-148)

PIN CONNECTION:

1) Laser diode anode

2) Laser diode cathode and photodiode cathode

3) Photodiode anode

Absolute Maximum Ratings (Tc = 25°C)

CHARACTERISTIC

Optical Output Power

LD Reverse Voltage

PD Reverse Voltage

Operating Temperature

Storage Temperature

SYMBOL

P_o

RATING

350

1.5

-20 .. +40

-40 .. +70

UNIT

°C

V_R(LD)

V_R(PD)

T_C

T_STG

°C

Optical-Electrical Characteristics (Tc = 25°C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX UNIT

Emitting Aperture

Optical Output Power

Threshold Current

Operation Current

Forward Voltage

Lasing Wavelength

Spectral Width FWHM

Beam Divergence

Monitor Current

P_o

I_th

I_op

U_f

λ_p

∆λ

θ_//

θ_⊥

I_m

1 x 5

300

390

1.9

940

0.2

µm²

single mode

400

2.0

945

0.3

P_o= 300 mW

380

1.8

935

µA

100

500 1500

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