Datasheet > RLT83500GOP

RLT83500GOP

更新时间： 2022-04-21 14:07:28

品牌	Logo	应用领域
ROITHNER		二极管激光二极管
页数	文件大小	规格书
2页	129K
描述
High Power Infrared Laser Diode

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RLT83500GOP 数据手册

RLT83500GOP

TECHNICAL DATA

High Power Infrared Laser Diode

Lasing wavelength: 830 nm typ.

Max. optical power: 500 mW, cw

Emitting Aperture: 1x50 μm²

Package: 9 mm

PIN CONNECTION:

1) Laserdiode cathode

2) Laserdiode anode

3) n.c.

Specification (Tc = 25°C)

CHARACTERISTIC

MIN

0.5

UNIT

Optical Output Power

Threshold Current

Operation Current

Operation Voltage

Slope Efficiency

≤0.25

≤0.95

≤2.1

≥0.80

0.80

830 ±10

≤3

W/A

Ω

Series Resistance

Central Wavelength

Spectral Width

nm/°C

deg

Wavelength Temperature Coefficient

Beam Divergence

Polarization

0.3

Reverse Voltage

2.0

Operating Temperature

Storage Temperature

10 - 30

-10 – 70

°C

03.08.2010

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