Datasheet > RLT83500G

RLT83500G

更新时间： 2022-04-21 14:07:26

品牌	Logo	应用领域
ROITHNER		二极管激光二极管
页数	文件大小	规格书
2页	132K
描述
High Power Infrared Laser Diode

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RLT83500G 数据手册

RLT83500G

TECHNICAL DATA

High Power Infrared Laser Diode

Lasing wavelength: 830 nm typ.

Max. optical power: 500 mW, cw

Emitting Aperture: 1x50 μm²

Package: 9 mm

PIN CONNECTION:

1) Laserdiode cathode

2) Laserdiode anode and photodiode cathode

3) Photodiode anode

Specification (Tc = 25°C)

CHARACTERISTIC

Optical Output Power

Threshold Current

Operation Current

Operation Voltage

Slope Efficiency

MIN

0.5

UNIT

≤0.25

≤0.95

≤2.1

≥0.80

0.80

W/A

Ω

Series Resistance

Central Wavelength

Spectral Width

830 ±10

≤3

nm/°C

deg

Wavelength Temperature Coefficient

Beam Divergence

Monitor Current

0.3

400 – 1000

Polarization

Reverse Voltage

2.0

Operating Temperature

Storage Temperature

10 - 30

-10 – 70

°C

03.08.2010

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