Datasheet > RLT6505G

RLT6505G

更新时间： 2024-11-02 09:47:15

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描述
Visible Wavelength Laserdiode

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数据手册

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RLT6505G 数据手册

ROITHNER LASERTECHNIK

A-1040 WIEN, FLEISCHMANNGASSE 9

TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43

e-mail: rlt@mcb.at

http://www.roithner.mcb.at

RLT6505G TECHNICAL DATA

Visible Wavelength Laserdiode

Structure: AlGaInP, index guided, single transverse mode

Lasing wavelength: 650 nm

Max. optical power: 5 mW

Package: 9 mm G or 5.6mm MG

PIN CONNECTION:

1) Laser diode cathode

2) Laser diode anode and photodiode cathode

3) Photodiode anode

Maximum Ratings (Tc=25°C)

CHARACTERISTIC

Optical Output Power

LD Reverse Voltage

PD Reverse Voltage

Operation Case Temperature

Storage Temperature

SYMBOL

P_o

V_R(LD)

V_R(PD)

T_C

RATING

UNIT

°C

-10 .. +40

-40 .. +85

T_STG

°C

Optical-Electrical Characteristics (Tc = 25°C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX UNIT

Optical Output Power

Threshold Current

Operation Current

Operating Voltage

Lasing Wavelength

Beam Divergence

Astigmatism

P_o

I_th

I_op

V_op

l _p

q ₁

q ₂

I_m

kink free

2.7

655

µm

µA

2.2

650

P_o=5mW

P_o=5mW, NA=0.4

P_o=5mW, V_r=5V

Monitor Current

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