Datasheet > RLT7870MG

RLT7870MG

更新时间： 2022-04-21 10:32:27

品牌	Logo	应用领域
ROITHNER		二极管激光二极管
页数	文件大小	规格书
3页	312K
描述
High Power Infrared Laser Diode

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RLT7870MG 数据手册

RLT7870MG

TECHNICAL DATA

High Power Infrared Laser Diode

Features

•

Lasing Mode Structure: single transverse mode

Peak Wavelength : typ. 785 nm

Optical Ouput Power: 70 mW

Package: 5.6 mm

Electrical Connection

Pin Configuration

Bottom View

n-type

Function

LD Anode

LD Cathode

Absolute Maximum Ratings (T_C=25°C)

Item

Symbol

Value

100

Unit

CW Output Power

P_O

P_{O pulse}

U_R

T_C

Pulsed Output Power*

Reverse Voltage

Operating Case Temperature

Storage Temperature

* duty < 50%, pulse width <0.1µs

T_C

T_stg

-10 … +60

-40 … +100

°C

Specifications (T_C=25°C)

Item

Optical Specification

CW Output Power

Peak Wavelength

Test Conditions Symbol

Min.

Typ.

Max.

Unit

CW, P_O= 60mW

P_O

λ_P

798

deg

775

785

θ_║

θ_┴

FWHM Beam Divergence

CW, P_O= 60mW

Electrical Specification

Threshold Current

Operating Current

Slope Efficiency

I_th

I_op

1.0

1.8

140

mW/mA

CW, P_O= 60mW

Operating Voltage

U_op

2.2

The above specifications are for reference purpose only and subjected to change without prior notice.

21.12.2011

RLT7870MG

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