Datasheet > RLT6650G

RLT6650G

更新时间： 2024-02-10 06:08:04

品牌	Logo	应用领域
ROITHNER		/
页数	文件大小	规格书
1页	57K
描述
High Power Visible Laserdiode

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技术参数
数据手册

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RLT6650G 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.61	Base Number Matches：	1

RLT6650G 数据手册

ROITHNER LASERTECHNIK

A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA

TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44

office@roithner-laser.com www.roithner-laser.com

RLT6650G TECHNICAL DATA

High Power Visible Laserdiode

Structure: High Efficiency MOVCD Quantum Well Design

Lasing wavelength: 660 nm typ., multimode

NOTE!

Output power: 50 mW

Package: 9 mm

LASERDIODE

MUST BE COOLED!

PIN CONNECTION:

1) Laser diode cathode

2) Laser diode anode and photodiode cathode

3) Photodiode anode

Absolute Maximum Ratings (Tc=25°C)

CHARACTERISTIC

Optical Output Power

LD Reverse Voltage

PD Reverse Voltage

Operating Temperature

Storage Temperature

SYMBOL

P_o

RATING

-10 .. +40

-40 .. +85

UNIT

°C

V_R(LD)

V_R(PD)

T_C

T_STG

°C

Optical-Electrical Characteristics (Tc = 25°C)

CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX

UNIT

Optical Output Power

Threshold Current

Operation Current

Operation Voltage

Lasing Wavelength

Beam Divergence

Lasing Aperture

P_o

I_th

cw operation

P_o= 50 mW

120

I_op

V_op

l _p

q_//

q_^

135 160 220

2.0 2.1 2.2

655 660 665

10 x 1

µm²

Monitor Current

I_m

0.35 0.5

1.5

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