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RLT650-500-T PDF预览

RLT650-500-T

更新时间: 2024-11-02 12:32:31
品牌 Logo 应用领域
ROITHNER 二极管激光二极管
页数 文件大小 规格书
3页 123K
描述
High Power Visible Laser Diode

RLT650-500-T 数据手册

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RLT650-500-T  
TECHNICAL DATA  
High Power Visible Laser Diode  
Features  
Lasing Mode Structure: multi mode  
Peak Wavelength : typ. 650 nm  
Optical Ouput Power: 500 mW  
Package: TO-3, without Photodiode  
Electrical Connection  
Pin Configuration  
PIN  
Bottom View  
Function  
1
2
LD Cathode  
LD Anode (isolated from case)  
Absolute Maximum Ratings (TC=20°C)  
Item  
Symbol  
Value  
500  
-10 … +25  
-40 … +85  
Unit  
mW  
°C  
CW Output Power  
PO  
TC  
Tstg  
Operating Case Temperature  
Storage Temperature  
°C  
Specifications (TC=20°C)  
Item  
Optical Specifications  
CW Output Power  
Center Wavelength  
Spectral Width (FWHM)  
Wavelength Temperature Coefficient  
Symbol  
Min.  
Typ.  
Max.  
Unit  
PO  
λC  
Δλ  
∂λ / T  
θ║  
θ┴  
-
500  
650  
1
0.25  
-
660  
2.5  
-
10  
40  
mW  
nm  
nm  
nm/°C  
deg  
deg  
µm  
645  
-
-
-
-
-
FWHM Beam Divergence  
-
150 x 1  
TE  
Emitting Aperature  
Polarization  
W x H  
Lifetime  
5000  
-
-
hour  
Electrical Specifications  
Threshold Current  
Operating Current  
Slope Efficiency  
Operating Voltage  
Series Resistance  
Ith  
Iop  
η
Uop  
Rd  
-
-
850  
1370  
0.90  
2.1  
1000  
1500  
-
2.3  
-
mA  
mA  
W/A  
V
0.85  
-
-
-
The above specifications are for reference purpose only and subjected to change without prior notice.  
25.08.2011  
RLT650-500-T  
1 of 3  

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