Datasheet > RJP1CS08DWA_15

RJP1CS08DWA_15

更新时间： 2024-11-12 01:05:19

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
4页	116K
描述
Inverter

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RJP1CS08DWA_15 数据手册

Preliminary Datasheet

RJP1CS08DWA / RJP1CS08DWS

1250V - 200A - IGBT

Application: Inverter

R07DS0831EJ0400

Rev.4.00

Sep 30, 2015

Features



Low collector to emitter saturation voltage

_CE(sat)= 1.8 V typ. (at I_C= 200 A, V_GE= 15 V, Tc = 25C)



High speed switching

Short circuit withstands time (10 s min.)

Outline

Die

Wafer

1 G

1. Gate

2. Collector (The back)

3. Emitter

Absolute Maximum Ratings

(Tc = 25°C unless otherwise noted)

Item

Collector to emitter voltage

Gate to emitter voltage

Symbol

V_CES

V_GES

I_C

Ratings

1250

±30

Unit

Collector current

Tc = 25°C

Tc = 100°C

400

I_C

200

Junction temperature

175 ^Note1

C

Notes: 1. Please use this device in the thermal conditions where the junction temperature does not exceed 175C.

IGBT Application Note is disclosed about reliability test and application condition up to Tj = 175C.

R07DS0831EJ0400 R07DS0831EJ0400 Rev.4.00

Sep 30, 2015

Page 1 of 3

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