Datasheet > RJP1CS08DWS

RJP1CS08DWS

更新时间： 2024-11-12 11:16:23

品牌	Logo	应用领域
瑞萨 - RENESAS		双极性晶体管
页数	文件大小	规格书
4页	77K
描述
IGBT 1250V 200A Sawn

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数据手册

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RJP1CS08DWS 数据手册

Preliminary Datasheet

RJP1CS08DWT/RJP1CS08DWA

1250V - 200A - IGBT

Application: Inverter

R07DS0831EJ0100

Rev.1.00

Jan 23, 2013

Features



Low collector to emitter saturation voltage

V_CE(sat)= 1.8 V typ. (at I_C= 200 A, V_GE= 15 V, Ta = 25C)

High speed switching



Short circuit withstands time (10 s min.)

Outline

Die: RJP1CS08DWT-80

Wafer: RJP1CS08DWA-80

1 G

1. Gate

2. Collector (The back)

3. Emitter

Absolute Maximum Ratings

(Ta = 25°C)

Item

Collector to emitter voltage

Gate to emitter voltage

Symbol

V_CES

V_GES

I_C

Ratings

1250

±30

Unit

Collector current

Tc = 25°C

400

Tc = 100°C

I_C

200

Junction temperature

150

C

R07DS0831EJ0100 Rev.1.00

Jan 23, 2013

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