Preliminary Datasheet
RJP1CS23DWA / RJP1CS23DWS
1250V - 30A - IGBT
Application: Inverter
R07DS1301EJ0100
Rev. 1.00
Sep 30, 2015
Features
Renesas generation 7th Trench IGBT
Low collector to emitter saturation voltage
VCE(sat) = 1.55 V typ. (at IC = 30 A, VGE = 15 V, Tc = 25C)
Moderate speed switching
Short circuit withstands time (10 s min.)
Outline
Die
Wafer
2
C
2
3
3
1 G
1
E
3
1. Gate
2. Collector (The back)
3. Emitter
Absolute Maximum Ratings
( Tc = 25°C unless otherwise noted )
Item
Collector to emitter voltage
Gate to emitter voltage
Symbol
VCES
VGES
IC
Ratings
1250
±30
Unit
V
V
Collector current
Tc = 25°C
60
A
Tc = 100°C
IC
30
A
Junction temperature
Tj
175Note1
C
Notes: 1. Please use this device in the thermal conditions where the junction temperature does not exceed 175C.
IGBT Application Note is disclosed about reliability test and application condition up to Tj = 175C.
R07DS1301EJ0100 Rev. 1.00
Sep 30, 2015
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