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RJP1CS08DWS-80 PDF预览

RJP1CS08DWS-80

更新时间: 2024-11-12 01:05:19
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
4页 116K
描述
Inverter

RJP1CS08DWS-80 数据手册

 浏览型号RJP1CS08DWS-80的Datasheet PDF文件第2页浏览型号RJP1CS08DWS-80的Datasheet PDF文件第3页浏览型号RJP1CS08DWS-80的Datasheet PDF文件第4页 
Preliminary Datasheet  
RJP1CS08DWA / RJP1CS08DWS  
1250V - 200A - IGBT  
Application: Inverter  
R07DS0831EJ0400  
Rev.4.00  
Sep 30, 2015  
Features  
Low collector to emitter saturation voltage  
CE(sat) = 1.8 V typ. (at IC = 200 A, VGE = 15 V, Tc = 25C)  
V
High speed switching  
Short circuit withstands time (10 s min.)  
Outline  
Die  
Wafer  
2
C
3
3
3
3
2
1 G  
1
E
3
1. Gate  
2. Collector (The back)  
3. Emitter  
Absolute Maximum Ratings  
(Tc = 25°C unless otherwise noted)  
Item  
Collector to emitter voltage  
Gate to emitter voltage  
Symbol  
VCES  
VGES  
IC  
Ratings  
1250  
±30  
Unit  
V
V
Collector current  
Tc = 25°C  
Tc = 100°C  
400  
A
IC  
200  
A
Junction temperature  
Tj  
175 Note1  
C  
Notes: 1. Please use this device in the thermal conditions where the junction temperature does not exceed 175C.  
IGBT Application Note is disclosed about reliability test and application condition up to Tj = 175C.  
R07DS0831EJ0400 R07DS0831EJ0400 Rev.4.00  
Sep 30, 2015  
Page 1 of 3  

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