Preliminary Datasheet
RJP1CS10DWA / RJP1CS10DWS
1250V - 10A - IGBT
Application: Inverter
R07DS1300EJ0200
Rev. 2.00
Sep 30, 2015
Features
Low collector to emitter saturation voltage
CE(sat) = 1.8 V typ. (at IC = 10 A, VGE = 15 V, Tc = 25C)
V
High speed switching
Short circuit withstands time (10 s min.)
Outline
Die: RJP1CS10DWT-80
Wafer: RJP1CS10DWA-80
2
C
2
1 G
3
1
E
3
1. Gate
2. Collector (The back)
3. Emitter
Absolute Maximum Ratings
( Tc = 25°C unless otherwise noted )
Item
Collector to emitter voltage
Gate to emitter voltage
Symbol
VCES
VGES
IC
Ratings
1250
±30
Unit
V
V
Collector current
Tc = 25°C
20
A
Tc = 100°C
IC
10
A
Junction temperature
Tj
175Note1
C
Notes: 1. Please use this device in the thermal conditions where the junction temperature does not exceed 175C.
IGBT Application Note is disclosed about reliability test and application condition up to Tj = 175C.
R07DS1300EJ0200 Rev. 2.00
Sep 30, 2015
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