Datasheet > RJP1CS10DWS-80

RJP1CS10DWS-80

更新时间： 2024-11-12 01:05:19

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
4页	160K
描述
Inverter

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RJP1CS10DWS-80 数据手册

Preliminary Datasheet

RJP1CS10DWA / RJP1CS10DWS

1250V - 10A - IGBT

Application: Inverter

R07DS1300EJ0200

Rev. 2.00

Sep 30, 2015

Features



Low collector to emitter saturation voltage

_CE(sat)= 1.8 V typ. (at I_C= 10 A, V_GE= 15 V, Tc = 25C)



High speed switching

Short circuit withstands time (10 s min.)

Outline

Die: RJP1CS10DWT-80

Wafer: RJP1CS10DWA-80

1 G

1. Gate

2. Collector (The back)

3. Emitter

Absolute Maximum Ratings

( Tc = 25°C unless otherwise noted )

Item

Collector to emitter voltage

Gate to emitter voltage

Symbol

V_CES

V_GES

I_C

Ratings

1250

±30

Unit

Collector current

Tc = 25°C

Tc = 100°C

I_C

Junction temperature

175^Note1

C

Notes: 1. Please use this device in the thermal conditions where the junction temperature does not exceed 175C.

IGBT Application Note is disclosed about reliability test and application condition up to Tj = 175C.

R07DS1300EJ0200 Rev. 2.00

Sep 30, 2015

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