RHRU7540, RHRU7550, RHRU7560
Data Sheet
April 1995
File Number 3945.1
75A, 400V - 600V Hyperfast Diodes
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<55ns
RHRU7540, RHRU7550 and RHRU7560 (TA49067) are
hyperfast diodes with soft recovery characteristics
o
• Operating Temperature . . . . . . . . . . . . . . . . . . . +175 C
(t
< 55ns). They have half the recovery time of ultrafast
RR
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
diodes and are silicon nitride passivated ion-implanted epi-
taxial planar construction.
These devices are intended for use as freewheeling/clamp-
ing diodes and rectifiers in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reduc-
ing power loss in the switching transistors.
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
PACKAGING AVAILABILITY
Package
PART NUMBER
RHRU7540
PACKAGE
TO-218
BRAND
RHRU7540
SINGLE LEAD JEDEC STYLE TO-218
RHRU7550
TO-218
TO-218
RHRU7550
RHRU7560
RHRU7560
ANODE
NOTE: When ordering, use the entire part number.
CATHODE
(FLANGE)
Symbol
K
A
o
Absolute Maximum Ratings T = +25 C, Unless Otherwise Specified
C
RHRU7540
400
RHRU7550
500
RHRU7560
600
UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
V
V
V
A
RRM
RWM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
400
500
600
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
400
500
600
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . I
75
75
75
F(AV)
o
(T = +80 C)
C
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
150
750
150
750
150
750
A
A
FSM
FSM
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
190
50
190
50
190
50
W
D
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . .E
mj
AVL
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . .T
, T
-65 to +175
-65 to +175
-65 to +175
C
STG
J
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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