RGT8NS65D
650V 4A Field Stop Trench IGBT
Data Sheet
lOutline
LPDS / TO-262
VCES
IC(100°C)
VCE(sat) (Typ.)
PD
650V
4A
(2)
1.65V
65W
(1)
(3)
(1)(2)(3)
lFeatures
lInner Circuit
1) Low Collector - Emitter Saturation Voltage
2) Low Switching Loss
(2)
(1) Gate
(2) Collector
(3) Emitter
*1
3) Short Circuit Withstand Time 5μs
(1)
4) Built in Very Fast & Soft Recovery FRD
(RFN - Series)
*1 Built in FRD
(3)
5) Pb - free Lead Plating ; RoHS Compliant
lPackaging Specifications
Packaging
Taping / Tube
330 / -
lApplications
General Inverter
Reel Size (mm)
UPS
Tape Width (mm)
Type
24 / -
Power Conditioner
Welder
Basic Ordering Unit (pcs) 1,000 / 1,000
Packing Code
Marking
TL / C9
RGT8NS65D
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Collector - Emitter Voltage
Symbol
VCES
VGES
IC
Value
Unit
V
650
Gate - Emitter Voltage
V
30
TC = 25°C
8
A
Collector Current
TC = 100°C
IC
4
A
*1
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation
12
A
ICP
TC = 25°C
IF
IF
7
A
TC = 100°C
4
A
*1
12
65
A
IFP
TC = 25°C
PD
PD
Tj
W
W
°C
°C
TC = 100°C
32
Operating Junction Temperature
-40 to +175
-55 to +175
Tstg
Storage Temperature
*1 Pulse width limited by Tjmax.
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2015.11 - Rev.C
1/11