Datasheet > RF1S22N10SM

RF1S22N10SM

更新时间： 2024-09-24 22:43:59

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲
页数	文件大小	规格书
6页	52K
描述
22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs

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RF1S22N10SM 数据手册

RFP22N10, RF1S22N10SM

Data Sheet

July 1999

File Number 2385.3

22A, 100V, 0.080 Ohm, N-Channel Power

MOSFETs

Features

• 22A, 100V

These N-Channel power MOSFETs are manufactured using

the MegaFET process. This process, which uses feature

sizes approaching those of LSI integrated circuits gives

optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

drivers, and relay drivers. These transistors can be operated

directly from integrated circuits.

• r

= 0.080Ω

DS(ON)

• UIS SOA Rating Curve (Single Pulse)

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Formerly developmental type TA9845.

• 175 C Operating Temperature

• Related Literature

Ordering Information

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

PART NUMBER

PACKAGE

TO-220AB

TO-263AB

BRAND

RFP22N10

F1S22N10

RFP22N10

Symbol

RF1S22N10SM

NOTE: When ordering use the entire part number. Add the suffix, 9A,

to obtain the TO-263AB variant in tape and reel, e.g. RF1S22N10SM9A.

Packaging

JEDEC TO-220AB

JEDEC TO-263AB

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

DRAIN

(FLANGE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

4-499

12 3 4 5 6

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