Datasheet > RF1S40N10LESM

RF1S40N10LESM

更新时间： 2024-09-24 22:43:59

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关
页数	文件大小	规格书
8页	415K
描述
40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs

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RF1S40N10LESM 数据手册

RFG40N10LE, RFP40N10LE, RF1S40N10LESM

Data Sheet

October 1999

File Number 4061.5

40A, 100V, 0.040 Ohm, Logic Level

N-Channel Power MOSFETs

Features

• 40A, 100V

• r = 0.040Ω

These N-Channel enhancement mode power MOSFETs are

manufactured using the latest manufacturing process

technology. This process, which uses feature sizes

approaching those of LSI integrated circuits gives optimum

utilization of silicon, resulting in outstanding performance.

They were designed for use in applications such as

switching regulators, switching converters, motor drivers and

relay drivers. These transistors can be operated directly from

integrated circuits.

DS(ON)

• Temperature Compensating PSPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175 C Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA49163.

Symbol

Ordering Information

PART NUMBER

PACKAGE

BRAND

FG40N10L

RFG40N10LE

TO-247

RFP40N10LE

TO-220AB

TO-263AB

FP40N10L

F40N10LE

RF1S40N10LESM

NOTE: When ordering, use the entire part number. Add the suffix, 9A, to

obtain the TO-263AB variant in tape and reel, i.e. RF1S40N10LESM9A.

Packaging

JEDEC STYLE TO-247

JEDEC TO-220AB

SOURCE

DRAIN

GATE

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

DRAIN (FLANGE)

JEDEC TO-263AB

DRAIN

(FLANGE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

12 3 4 5 6 7 8

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与RF1S40N10LESM相关器件

型号	品牌	获取价格	描述	数据表
RF1S40N10LESM9A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 40A I(D) \| TO-263AB
RF1S40N10SM	FAIRCHILD	获取价格	40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs
RF1S40N10SM	INTERSIL	获取价格	40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs
RF1S40N10SM9A	FAIRCHILD	获取价格	Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Met
RF1S42N03LSM	INTERSIL	获取价格	42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET
RF1S42N03LSM	RENESAS	获取价格	Power Field-Effect Transistor, 42A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Met
RF1S42N03LSM9A	RENESAS	获取价格	Power Field-Effect Transistor, 42A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Met
RF1S42N03SM	RENESAS	获取价格	42A, 30V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
RF1S42N03SM9A	RENESAS	获取价格	42A, 30V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
RF1S45N02L	INTERSIL	获取价格	45A, 20V, 0.022 Ohm, N-Channel Logic Level Power MOSFETs