Datasheet > RF1S4N100SM

RF1S4N100SM

更新时间： 2024-09-25 22:43:59

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲
页数	文件大小	规格书
6页	49K
描述
4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs

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RF1S4N100SM 数据手册

RFP4N100, RF1S4N100SM

Data Sheet

August 1999

File Number 2457.4

4.3A, 1000V, 3.500 Ohm, High Voltage,

N-Channel Power MOSFETs

Features

• 4.3A, 1000V

• r = 3.500Ω

The RFP4N100 and RFP4N100SM are N-Channel

enhancement mode silicon gate power field effect

transistors. They are designed for use in applications such

as switching regulators, switching converters, motor

drivers, relay drivers, and drivers for high power bipolar

switching transistors requiring high speed and low gate

drive power. This type can be operated directly from an

integrated circuit.

DS(ON)

• UIS Rating Curve (Single Pulse)

• -55 C to 150 C Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA09850.

Symbol

Ordering Information

PART NUMBER

PACKAGE

TO-220AB

TO-263AB

BRAND

RFP4N100

F1S4N100

RFP4N100

RF1S4N100SM

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-220AB

JEDEC TO-263AB

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

GATE

DRAIN (FLANGE)

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow properS ESD Handling Procedures.

4-528

12 3 4 5 6

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