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RF1S530SM9A

更新时间： 2024-11-13 23:32:43
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其他 - ETC 晶体晶体管开关脉冲
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7页 97K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 14A I(D) | TO-263AB

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RF1S530SM9A 数据手册

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RF1S530SM  
Data Sheet  
February 2001  
File Number 1575.8  
14A, 100V, 0.160 Ohm, N-Channel Power  
MOSFETs  
Features  
• 14A, 100V  
[ /Title These are N-Channel enhancement mode silicon gate  
• r = 0.160Ω  
DS(ON)  
power field effect transistors. They are advanced power  
(RF1S  
530SM  
)
• Single Pulse Avalanche Energy Rated  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
MOSFETs designed, tested, and guaranteed to withstand a  
specified level of energy in the breakdown avalanche mode  
of operation. All of these power MOSFETs are designed for  
applications such as switching regulators, switching  
/Sub-  
ject  
convertors, motor drivers, relay drivers, and drivers for high  
power bipolar switching transistors requiring high speed and  
low gate drive power. These types can be operated directly  
from integrated circuits.  
(14A,  
100V,  
0.160  
Ohm,  
N-  
• Related Literature  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Formerly developmental type TA17411.  
Ordering Information  
Symbol  
Chan-  
nel  
D
PART NUMBER  
PACKAGE  
BRAND  
RF1S530  
Power  
MOS-  
FETs)  
/Autho  
r ()  
RF1S530SM  
TO-263AB  
NOTE: When ordering, use the entire part number. Add the suffix 9A  
to obtain the TO-263AB variant in the tape and reel, i.e.,  
RF1S530SM9A.  
G
S
/Key-  
words  
(14A,  
100V,  
0.160  
Ohm,  
N-  
Packaging  
JEDEC TO-263AB  
DRAIN  
(FLANGE)  
GATE  
SOURCE  
Chan-  
nel  
o
Absolute Maximum Ratings  
T
= 25 C, Unless Otherwise Specified  
C
Power  
MOS-  
FETs,  
Inter-  
sil  
Corpo-  
ration,  
TO-  
263AB  
)
/Cre-  
ator ()  
RF1S530SM  
UNITS  
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
100  
100  
14  
10  
56  
V
V
A
A
A
V
W
DS  
Drain to Gate Voltage (R  
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
GS  
DGR  
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
D
D
o
T
= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
C
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
DM  
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
20  
79  
0.53  
69  
-55 to 175  
GS  
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P  
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E  
D
o
W/ C  
mJ  
AS  
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T  
Maximum Temperature for Soldering  
T
C
J, STG  
o
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T  
300  
260  
C
L
o
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T  
C
pkg  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the  
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
NOTE:  
o
o
1. T = 25 C to 150 C.  
J
©2001 Fairchild Semiconductor Corporation  
RF1S530SM Rev. A  
1234567

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