Datasheet > RF1S50N06LESM

RF1S50N06LESM

更新时间： 2024-11-12 22:43:59

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关
页数	文件大小	规格书
8页	414K
描述
50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs

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RF1S50N06LESM 数据手册

RFG50N06LE, RFP50N06LE, RF1S50N06LESM

Data Sheet

October 1999

File Number 4072.3

50A, 60V, 0.022 Ohm, Logic Level

N-Channel Power MOSFETs

Features

• 50A, 60V

• r = 0.022Ω

These N-Channel enhancement mode power MOSFETs are

manufactured using the latest manufacturing process

technology. This process, which uses feature sizes

approaching those of LSI circuits, gives optimum utilization

of silicon, resulting in outstanding performance. They were

designed for use in applications such as switching

regulators, switching converters, motor drivers, and relay

drivers. These transistors can be operated directly from

integrated circuits.

DS(ON)

• Temperature Compensating PSPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175 C Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA49164.

Symbol

Ordering Information

PART NUMBER

PACKAGE

BRAND

FG50N06L

RFG50N06LE

TO-247

RFP50N06LE

TO-220AB

TO-263AB

FP50N06L

F50N06LE

RF1S50N06LESM

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-263AB variant in tape and reel, i.e.

RF1S50N06LESM9A.

Packaging

JEDEC STYLE TO-247

JEDEC TO-220AB

SOURCE

DRAIN

SOURCE

DRAIN

GATE

DRAIN

(BOTTOM

SIDE METAL)

DRAIN (FLANGE)

JEDEC TO-263AB

DRAIN

(FLANGE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

12 3 4 5 6 7 8

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与RF1S50N06LESM相关器件

型号	品牌	获取价格	描述	数据表
RF1S50N06LESM9A	FAIRCHILD	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Met
RF1S50N06SM	INTERSIL	获取价格	50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs
RF1S50N06SM	FAIRCHILD	获取价格	50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs
RF1S50N06SM9A	RENESAS	获取价格	50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
RF1S50N06SM9A	FAIRCHILD	获取价格	Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Met
RF1S50N06SM9A	ROCHESTER	获取价格	50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
RF1S530	RENESAS	获取价格	RF1S530
RF1S530SM	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 14A I(D) \| TO-263AB
RF1S530SM9A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 14A I(D) \| TO-263AB
RF1S540	ROCHESTER	获取价格	28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA