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RF1S45N03LSM PDF预览

RF1S45N03LSM

更新时间: 2024-09-25 22:14:27
品牌 Logo 应用领域
英特矽尔 - INTERSIL /
页数 文件大小 规格书
7页 103K
描述
45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

RF1S45N03LSM 数据手册

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Semiconductor  
RFP45N03L,  
RF1S45N03L, RF1S45N03LSM  
45A, 30V, 0.022 Ohm,  
Logic Level, N-Channel Power MOSFETs  
September 1998  
Features  
Description  
• 45A, 30V  
These are N-Channel power MOSFETs manufactured using  
the MegaFET process. This process, which uses feature  
sizes approaching those of LSI circuits, gives optimum utili-  
[ /Title  
(RFP45  
N03L,  
RF1S45  
N03L,  
RF1S45  
N03LS  
M)  
• r  
DS(ON)  
= 0.022Ω  
zation of silicon, resulting in outstanding performance. They  
were designed for use in applications such as switching reg-  
ulators, switching converters, motor drivers and relay drivers.  
These transistors can be operated directly from integrated  
circuits.  
Temperature Compensating PSPICE Model  
• Can be Driven Directly from CMOS, NMOS, and TTL  
Circuits  
• Peak Current vs Pulse Width Curve  
• UIS Rating Curve  
Formerly developmental type TA49030.  
o
• 175 C Operating Temperature  
/Subject  
(45A,  
30V,  
• Related Literature  
Symbol  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
D
0.022  
Ohm,  
Ordering Information  
G
PART NUMBER  
RFP45N03L  
PACKAGE  
TO-220AB  
BRAND  
FP45N03L  
S
RF1S45N03L  
TO-262AA  
TO-263AB  
F45N03L  
F45N03L  
RF1S45N03LSM  
NOTE: When ordering, use the entire part number. Add the suffix 9A, to  
obtain the TO-263AB variant in tape and reel, e.g., RF1S45N03LSM9A.  
Packaging  
JEDEC TO-220AB  
JEDEC TO-262AA  
SOURCE  
SOURCE  
DRAIN  
GATE  
DRAIN  
DRAIN  
(FLANGE)  
GATE  
DRAIN (FLANGE)  
JEDEC TO-263AB  
DRAIN  
(FLANGE)  
GATE  
SOURCE  
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.  
File Number 4005.2  
Copyright © Harris Corporation 1998  
7-1  

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