Datasheet > RD48F2000W0ZBQ0

RD48F2000W0ZBQ0

更新时间： 2024-11-14 21:08:43

品牌	Logo	应用领域
英特尔 - INTEL		内存集成电路闪存
页数	文件大小	规格书
98页	1119K
描述
Flash, 4MX16, 20ns, PBGA88, SCSP-88

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技术参数
数据手册

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RD48F2000W0ZBQ0 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
零件包装代码：	BGA	包装说明：	TFBGA, BGA88,8X12,32
针数：	88	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.1.A	HTS代码：	8542.32.00.51
风险等级：	5.71	最长访问时间：	20 ns
其他特性：	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	启动块：	BOTTOM
命令用户界面：	YES	通用闪存接口：	YES
数据轮询：	NO	JESD-30 代码：	R-PBGA-B88
JESD-609代码：	e0	长度：	10 mm
内存密度：	67108864 bit	内存集成电路类型：	FLASH
内存宽度：	16	功能数量：	1
部门数/规模：	8,127	端子数量：	88
字数：	4194304 words	字数代码：	4000000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	4MX16
封装主体材料：	PLASTIC/EPOXY	封装代码：	TFBGA
封装等效代码：	BGA88,8X12,32	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, THIN PROFILE, FINE PITCH	页面大小：	4 words
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	240
电源：	1.8/3 V	编程电压：	1.8 V
认证状态：	Not Qualified	座面最大高度：	1.2 mm
部门规模：	4K,32K	最大待机电流：	0.000005 A
子类别：	Flash Memories	最大压摆率：	0.04 mA
最大供电电压 (Vsup)：	1.9 V	最小供电电压 (Vsup)：	1.7 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	BALL
端子节距：	0.8 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	30	切换位：	NO
类型：	NOR TYPE	宽度：	8 mm
Base Number Matches：	1

RD48F2000W0ZBQ0 数据手册

Intel^®Wireless Flash Memory (W30)

28F640W30, 28F320W30, 28F128W30

Datasheet

Product Features

■ High Performance Read-While-Write/Erase

— Burst Frequency at 40 MHz

— 70 ns Initial Access Speed

— 25 ns Page-Mode Read Speed

— 20 ns Burst-Mode Read Speed

— Burst- and Page-Mode in All Blocks and

across All Partition Boundaries

— Burst Suspend Feature

— Enhanced Factory Programming:

3.5 µs per Word Program Time

— Programmable WAIT Signal Polarity

■ Flash Power

■ Flash Architecture

— Multiple 4-Mbit Partitions

— Dual Operation: RWW or RWE

— Parameter Block Size = 4-Kword

— Main block size = 32-Kword

— Top and Bottom Parameter Devices

■ Flash Security

— 128-bit Protection Register: 64 Unique Device

Identifier Bits; 64 User OTP Protection

— Absolute Write Protection with V_PPat Ground

— Program and Erase Lockout during Power

Transitions

— V_CC= 1.70 V – 1.90 V

— V_CCQ= 2.20 V – 3.30 V

— Standby Current (130 nm) = 8 µA (typ.)

— Read Current = 7 mA

— Individual and Instantaneous Block Locking/

Unlocking with Lock-Down

■ Density and Packaging

(4 word burst, typ.)

■ Flash Software

— 130 nm: 32Mb, 64Mb, and 128Mb in VF BGA

Package; 64Mb, 128Mb in QUAD+ Package

— 180 nm: 32Mb and 128Mb Densities in VF

BGA Package; 64Mb Density in µBGA*

Package

— 5 µs/9 µs (typ.) Program/Erase Suspend

Latency Time

— Intel^®Flash Data Integrator (FDI) and

Common Flash Interface (CFI) Compatible

■ Quality and Reliability

— 56 Active Ball Matrix, 0.75 mm Ball-Pitch

— 16-bit Data Bus

— Operating Temperature:

–40 °C to +85 °C

— 100K Minimum Erase Cycles

— 130 nm ETOX™ VIII Process

— 180 nm ETOX™ VII Process

The Intel^®Wireless Flash Memory (W30) device combines state-of-the-art Intel^®Flash

technology to provide the most versatile memory solution for high performance, low power,

board constraint memory applications. The W30 device offers a multi-partition, dual-operation

flash architecture that enables the device to read from one partition while programming or

erasing in another partition. This Read-While-Write or Read-While-Erase capability makes it

possible to achieve higher data throughput rates as compared to single partition devices,

allowing two processors to interleave code execution because program and erase operations can

now occur as background processes.

The W30 device incorporates a new Enhanced Factory Programming (EFP) mode to improve 12

V factory programming performance. This new feature helps eliminate manufacturing

bottlenecks associated with programming high density flash devices. Compare the EFP program

time of 3.5 µs per word to the standard factory program time of 8.0 µs per word and save

significant factory programming time for improved factory efficiency.

Additionally, the W30 device includes block lock-down and programmable WAIT signal

polarity, and is supported by an array of software tools. All these features make this product a

perfect solution for any demanding memory application.

Notice: This document contains information on new products in production. The specifications

are subject to change without notice. Verify with your local Intel sales office that you have the lat-

est datasheet before finalizing a design.

290702-010

December2004

12 3 4 5 6 7...98

中文翻译

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与RD48F2000W0ZBQ0相关器件

型号	品牌	获取价格	描述	数据表
RD48F2000W0ZTQ0	INTEL	获取价格	Flash, 4MX16, 20ns, PBGA88, SCSP-88
RD48F2200W0YDQ0	NUMONYX	获取价格	Flash, 4MX16, 14ns, PBGA88, 8 X 10 MM, 1.20 MM HEIGHT, STACK, CSP-88
RD48F2P0VB00	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD48F2P0VBQ0	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD48F2P0VT00	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD48F2P0VTQ0	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD48F2P0ZB00	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD48F2P0ZBQ0	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD48F2P0ZT00	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD48F2P0ZTQ0	INTEL	获取价格	Intel StrataFlash Embedded Memory

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