Datasheet > RD48F3000M0YBB0

RD48F3000M0YBB0

更新时间： 2024-11-15 08:27:39

品牌	Logo	应用领域
恒忆 - NUMONYX		/
页数	文件大小	规格书
141页	2256K
描述
Flash, 8MX16, 96ns, PBGA105,

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

RD48F3000M0YBB0 数据手册

Numonyx™ StrataFlash Cellular Memory

(M18)

Datasheet

Product Features

High-Performance Read, Program and Erase

Power

— Core voltage: 1.7 V - 2.0 V

— 96 ns initial read access

— 108 MHz with zero wait-state synchronous

burst reads: 7 ns clock-to-data output

— 133 MHz with zero wait-state synchronous

burst reads: 5.5 ns clock-to-data output

— 8-, 16-, and continuous-word

synchronous-burst Reads

— Programmable WAIT configuration

— Customer-configurable output driver

impedance

— Buffered Programming:

— I/O voltage: 1.7 V - 2.0 V

— Standby current: 60 µA (typ) for 512-Mbit,

65 nm

— Deep Power-Down mode: 2 µA (typ)

— Automatic Power Savings mode

— 16-word synchronous-burst read current:

23 mA (typ) @ 108 MHz; 24 mA (typ) @

133 MHz

Software

— Numonyx^™Flash Data Integrator

(Numonyx^™FDI) optimized

2.0 µs/Word (typ), 512-Mbit 65 nm;

Block Erase: 0.9 s per block (typ)

— 20 µs (typ) program/erase suspend

Architecture

— Basic Command Set and Extended

Command Set compatible

— Common Flash Interface

— 16-bit wide data bus

— Multi-Level Cell Technology

Security

— OTP Registers:

— Symmetrically-Blocked Array Architecture

— 256-Kbyte Erase Blocks

64 unique pre-programmed bits

2112 user-programmable bits

— Absolute write protection with V_PP= GND

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

— 1-Gbit device: Eight 128-Mbit partitions

— 512-Mbit device: Eight 64-Mbit partitions

— 256-Mbit device: Eight 32-Mbit partitions.

— 128-Mbit device: Eight 16-Mbit partitions.

— Read-While-Program and Read-While-Erase

— Status Register for partition/device status

— Blank Check feature

Density and Packaging

— Density: 128-, 256-, and 512-Mbit, and 1-

Gbit

— Address-data multiplexed and non-

multiplexed interfaces

— x16D (105-ball) Flash SCSP

— x16C (107-ball) Flash SCSP

— 0.8 mm pitch lead-free solder-ball

Quality and Reliability

— Expanded temperature: –30 °C to +85 °C

— Minimum 100,000 erase cycles per block

— ETOX™ X Process Technology (65 nm)

— ETOX™ IX Process Technology (90 nm)

Order Number: 309823-10

November 2007

12 3 4 5 6 7...141

中文翻译

下载PDF

与RD48F3000M0YBB0相关器件

型号	品牌	获取价格	描述	数据表
RD48F3000M0YBC0	NUMONYX	获取价格	Flash, 8MX16, 96ns, PBGA107,
RD48F3000M0YCC0	NUMONYX	获取价格	Flash, 8MX16, 96ns, PBGA107,
RD48F3000M0YFB0	NUMONYX	获取价格	Flash, 8MX16, 96ns, PBGA105,
RD48F3000M0YFC0	NUMONYX	获取价格	Flash, 8MX16, 96ns, PBGA107,
RD48F3000M0YTB0	NUMONYX	获取价格	Flash, 8MX16, 96ns, PBGA105,
RD48F3000M0YTC0	NUMONYX	获取价格	Flash, 8MX16, 96ns, PBGA107,
RD48F3000M0YUC0	NUMONYX	获取价格	Flash, 8MX16, 96ns, PBGA107,
RD48F3000P0XBQ0	INTEL	获取价格	Flash, 8MX16, 85ns, PBGA80, 8 X 10 MM, 1.20 MM HEIGHT, SCSP-88/80
RD48F3000P0XBQ0A	NUMONYX	获取价格	Flash, 8MX16, 85ns, PBGA64
RD48F3000P0XBQ0A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory

与RD48F3000M0YBB0相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

29
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

12
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

14
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

35

产品中心

服务支持

精选活动

关于我们

帮助中心

RD48F3000M0YBB0

RD48F3000M0YBB0 数据手册

与RD48F3000M0YBB0相关器件

与RD48F3000M0YBB0相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RD48F3000M0YBB0

RD48F3000M0YBB0 数据手册

与RD48F3000M0YBB0相关器件

与RD48F3000M0YBB0相关文章

您还可以找

您在本页遇到什么问题？