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RB551V-30 PDF预览

RB551V-30

更新时间: 2024-11-26 06:07:11
品牌 Logo 应用领域
商升特 - SEMTECH 二极管光电二极管局域网
页数 文件大小 规格书
3页 168K
描述
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

RB551V-30 数据手册

 浏览型号RB551V-30的Datasheet PDF文件第2页浏览型号RB551V-30的Datasheet PDF文件第3页 
RB551V-30  
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE  
Features  
PINNING  
• Small surface mounting type  
• Ultra low VF  
DESCRIPTION  
Cathode  
PIN  
1
Anode  
2
• High reliability  
2
1
SA  
Applications  
Top View  
Marking Code: "SA"  
• High frequency rectification switching regulation  
Simplified outline SOD-323 and symbol  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Symbol  
Value  
Unit  
Peak Reverse Voltage  
DC Reverse Voltage  
VRM  
VR  
IO  
30  
V
V
A
A
20  
Mean Rectifying Current  
0.5  
Peak Forward Surge Current (60 Hz for 1 Cyc.)  
Junction Temperature  
IFSM  
Tj  
2
O
C
125  
O
C
Storage Temperature Range  
Ts  
- 40 to + 125  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
VF  
Max.  
Unit  
V
Forward Voltage  
at IF = 100 mA  
at IF = 500 mA  
0.36  
0.47  
Reverse Current  
at VR = 20 V  
IR  
100  
µA  
Note: ESD sensitive product handling required.  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 01/09/2006  

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