Datasheet > RB551V-30_1

RB551V-30_1

更新时间： 2024-11-01 06:07:11

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
4页	123K
描述
Schottky barrier diode

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中文翻译

获取价格

数据手册

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RB551V-30_1 数据手册

RB551V-30

Diodes

Schottky barrier diode

RB551V-30

zApplications

zExternal dimensions (Unit : mm)

zLand size figure (Unit : mm)

High frequency rectification

1.25±0.1

0.1±0.1

ꢀꢀꢀ 0.05

0.9MIN.

zFeatures

1) Small mold type. (UMD2)

2) Low V .

3) High reliability.

UMD2

zConstruction

Silicon epitaxial planar

zStructure

0.7±0.2

ꢀꢀꢀ 0.1

0.3±0.05

ROHM : UMD2

JEDEC : S0D-323

JEITA : SC-90/A

dot (year week factory)

zTaping dimensions (Unit : mm)

φ1.55±0.05

0.3±0.1

2.0±0.05

4.0±0.1

φ1.05

1.40±0.1

1.0±0.1

zAbsolute maximum ratings (Ta = 25°C)

Parameter

Limits

Symbol

V_RM

V_R

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Average rectified forward current

Forward current surge peak (60Hz 1cyc

500

I_FSM

・

）

Junction temperature

Storage temperature

125

℃

-40 to +125

Tstg

zElectrical characteristics (Ta = 25°C)

Parameter

Forward voltage

Reverse current

Symbol

Min.

Typ.

Max.

0.36

0.47

100

Unit

Conditions

I_F=100mA

V_F1

V_F2

I_R

I_F=500mA

µA

V_R=20V

Rev.C

1/3

12 3 4

中文翻译

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