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RB551V-30_1 PDF预览

RB551V-30_1

更新时间: 2024-11-26 06:07:11
品牌 Logo 应用领域
罗姆 - ROHM 肖特基二极管
页数 文件大小 规格书
4页 123K
描述
Schottky barrier diode

RB551V-30_1 数据手册

 浏览型号RB551V-30_1的Datasheet PDF文件第2页浏览型号RB551V-30_1的Datasheet PDF文件第3页浏览型号RB551V-30_1的Datasheet PDF文件第4页 
RB551V-30  
Diodes  
Schottky barrier diode  
RB551V-30  
zApplications  
zExternal dimensions (Unit : mm)  
zLand size figure (Unit : mm)  
High frequency rectification  
1.25±0.1  
0.1±0.1  
ꢀꢀꢀ 0.05  
0.9MIN.  
zFeatures  
1) Small mold type. (UMD2)  
2) Low V .  
F
3) High reliability.  
UMD2  
zConstruction  
Silicon epitaxial planar  
zStructure  
0.7±0.2  
ꢀꢀꢀ 0.1  
0.3±0.05  
ROHM : UMD2  
JEDEC : S0D-323  
JEITA : SC-90/A  
dot (year week factory)  
zTaping dimensions (Unit : mm)  
φ1.55±0.05  
0.3±0.1  
2.0±0.05  
4.0±0.1  
4.0±0.1  
φ1.05  
1.40±0.1  
1.0±0.1  
zAbsolute maximum ratings (Ta = 25°C)  
Parameter  
Limits  
Symbol  
VRM  
VR  
Unit  
V
Reverse voltage (repetitive peak)  
Reverse voltage (DC)  
30  
20  
V
Average rectified forward current  
Forward current surge peak (60Hz 1cyc  
500  
2
Io  
mA  
A
IFSM  
Tj  
Junction temperature  
Storage temperature  
125  
-40 to +125  
Tstg  
zElectrical characteristics (Ta = 25°C)  
Parameter  
Forward voltage  
Reverse current  
Symbol  
Min.  
Typ.  
Max.  
0.36  
0.47  
100  
Unit  
V
Conditions  
IF=100mA  
VF1  
VF2  
IR  
-
-
-
-
-
-
V
IF=500mA  
µA  
VR=20V  
Rev.C  
1/3  

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