Datasheet > RB551V-30_13

RB551V-30_13

更新时间： 2024-11-26 12:29:11

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
6页	353K
描述
Schottky Barrier Diode

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中文翻译

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数据手册

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RB551V-30_13 数据手册

Schottky Barrier Diode

RB551V-30

Datasheet

lApplication

lDimensions (Unit : mm)

lLand size figure (Unit : mm)

High frequency rectification

1.25±0.1

0.1±0.1

ꢀꢀꢀ 0.05

0.9MIN.

lFeatures

1) Small mold type. (UMD2)

UMD2

Low V_F

3) High reliability.

lStructure

Cathode

0.7±0.2

ꢀꢀꢀ 0.1

0.3±0.05

ROHM : UMD2

JEDEC :SOD-323

JEITA : SC-90/A

dot (year week factory)

lConstruction

Anode

Silicon epitaxial planar

lTaping specifications (Unit : mm)

φ 1.55±0.05

f1.550.05

0.3±0.1

2.0±0.05

4.0±0.1

φ 1.05

f1.05

1.40±0.1

1.0±0.1

lAbsolute maximum ratings (Ta= 25°C)

Parameter

Symbol

Limits

Unit

V_RM

V_R

Reverse voltage (repetitive peak)

Reverse voltage (DC)

500

Average rectified forward current

Forward current surge peak (60Hz・1cyc)

Junction temperature

I_FSM

125

°C

Storage temperature

Tstg

-40 to +125

lElectrical characteristics (Ta = 25°C)

Parameter

Conditions

Symbol Min. Typ. Max.

Unit

V_F1

V_F2

I_R

I_F=100mA

0.36

0.47

100

Forward voltage

Reverse current

I_F=500mA

V_R=20V

www.rohm.com

2013.04 - Rev.D

1/5

12 3 4 5 6

中文翻译

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