Datasheet > RB551V-30B

RB551V-30B

更新时间： 2024-11-18 18:09:27

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	332K
描述
Schottky Diodes

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中文翻译

获取价格

数据手册

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RB551V-30B 数据手册

SMD Type

Diodes

Schottky Diodes

RB551V-30B

SOD-323

Ƶ Features

ƽ Low Positive Pressure Drop.

ƽ Can Ignore the Reverse Recovery Time.

Top View

PIN DESCRIPTION

DESCRIPTION

Cathode

Anode

Ƶ Absolute Maximum Ratings (T

= 25ć, unless otherwise specified)

Parameter

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Reverse Voltage

Symbol

Value

Unit

RRM

RWM

RMS Reverse Voltage

R(RMS)

FSM

350

Non-Repetitive Peak Forward Current

Non-Repetitive Peak Forward Surge Current

Power Dissipation

1.5

200

ഒ/W

Thermal Resistance Junction to Ambient

Junction Temperature

©JA

625

125

ഒ

Storage Temperature range

stg

-55 to 125

Ƶ Electrical Characteristics (T

= 25ć, unless otherwise specified)

Symbol Test Conditions

Parameter

Min

Typ

Max

Unit

Reverse breakdown voltage

= 10 μA

= 20 mA

= 200 mA

0.37

0.6

Forward voltage Drop

Instantaneous Reverse current

Total capacitance

IRM

= 30 V

μA

= 0 V, f= 1 MHz

Reverse recovery time

R= 200mA,Irr=0.1xI

R, RL

=100ȍ

Ƶ Marking

Marking

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中文翻译

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