Datasheet > RB551V-30_11

RB551V-30_11

更新时间： 2024-11-01 11:57:23

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
4页	996K
描述
Schottky barrier Diode

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中文翻译

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RB551V-30_11 数据手册

Data Sheet

Schottky barrier Diode

RB551V-30

Applications

Dimensions(Unit : mm)

Land size figure (Unit : mm)

High frequency rectification

1.25±0.1

0.1±0.1

ꢀꢀꢀ 0.05

0.9MIN.

Features

1) Small mold type. (UMD2)

2) Low V^F.

3) High reliability.

UMD2

Construction

Silicon epitaxial planar

Structure

0.7±0.2

ꢀꢀꢀ 0.1

0.3±0.05

ROHM : UMD2

JEDEC : S0D-323

JEITA : SC-90/A

dot (year week factory)

Taping specifications(Unit : mm)

φ1.55±0.05

0.3±0.1

2.0±0.05

4.0±0.1

φ1.05

1.40±0.1

1.0±0.1

Absolute maximum ratings(Ta=25°C)

Parameter

Limits

Symbol

V_RM

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

V_R

Average rectified forward current

Forward current surge peak (60Hz・1cyc)

Junction temperature

500

I_FSM

125

°C

Storage temperature

40 to 125

Tstg

Electrical characteristics(Ta=25°C)

Parameter

Symbol

V_F1

Min.

Typ.

Max.

0.36

0.47

100

Unit

Conditions

I_F=100mA

Forward voltage

Reverse current

V_F2

I_F=500mA

V_R=20V

I_R

μA

www.rohm.com

1/3

2011.05 - Rev.C

12 3 4

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