Datasheet > RB551V-30_12

RB551V-30_12

更新时间： 2024-11-01 07:17:59

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
4页	96K
描述
SMD Schottky Barrier Diodes

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中文翻译

获取价格

数据手册

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RB551V-30_12 数据手册

SMD Schottky Barrier Diodes

RB551V-30

Io = 500 mA

VR = 20 Volts

RoHS Device

SOD-323

Features

-Low reverse current.

0.071(1.80)

0.063(1.60)

-Designed for mounting on small surface.

-Extremely thin / leadless package.

-Majority carrier conduction.

0.055(1.40)

0.047(1.20)

0.014(0.35)

0.010(0.25)

0.106(2.70)

0.098(2.50)

Mechanical data

-Case: SOD-323 Standard package,

molded plastic.

-Terminals: Gold plated, solderable per

MIL-STD-750D, method 2026.

0.039(1.00)Max.

0.006(0.15)Max.

0.004(0.10)Max.

-Mounting position: Any.

0.019(0.475)REF

Dimensions in inches and (millimeter)

Maximum Ratings (at TA=25°C unless otherwise noted)

Symbol

VRRM

Typ

Max Unit

Parameter

Repetitive peak reverse voltage

Conditions

Min

Reverse voltage

Average forward current

500

8.3ms single half sine-wave superimposed

on rate load(JEDEC method)

Forward current,surge peak

IFSM

Storage temperature

Junction temperature

TSTG

-40

+125

°C

Electrical Characteristics (At Ta=25°C, unless otherwise noted)

Symbol

Typ

Max Unit

Parameter

Forward voltage

Conditions

Min

IF = 100 mA

IF = 500 mA

0.36

0.47

Reverse current

VR = 20 V

100

REV:B

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